Nanoscale EELS analysis of dielectric function and bandgap properties in GaN and related materials-Reference-Cited by-同舟云学术

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Nanoscale EELS analysis of dielectric function and bandgap properties in GaN and related materials

Published:2000-08 Issue:4 Volume:31 Page:435-440
ISSN:0968-4328
Container-title:Micron
language:en
Short-container-title:Micron

Author:

Brockt G,Lakner H

Publisher

Elsevier BV

Subject

Cell Biology,Structural Biology,General Physics and Astronomy,General Materials Science

Reference12 articles.

1. Assessment of electron energy loss spectroscopy below 5eV in semiconductor materials in a VG STEM;Bangert;Ultramicroscopy,1997

2. STEM characterization of MOVPE-grown (In, Ga) N quantum wells;Brockt;Inst. Phys. Conf. Ser.,1997

3. Electron Energy Loss Spectroscopy;Egerton,1996

4. The Optical Properties of Solids;Ehrenreich,1966

5. A minimal basis semi-ab initio approach to the band structure of semiconductors;Huang;J. Phys. Chem. Solids,1985

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