Mechanisms of the Chemical Mechanical Polishing (CMP) Process in Integrated Circuit Fabrication-Reference-Cited by-同舟云学术

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Mechanisms of the Chemical Mechanical Polishing (CMP) Process in Integrated Circuit Fabrication

Published:2001 Issue:1 Volume:50 Page:233-238
ISSN:0007-8506
Container-title:CIRP Annals
language:en
Short-container-title:CIRP Annals

Author:

Saka Nannaji,Lai Jiun-Yu,Chun Jung-Hoon,Sun Nam P.

Publisher

Elsevier BV

Subject

Industrial and Manufacturing Engineering,Mechanical Engineering

Reference15 articles.

1. Pattern Geometry Effects in the Chemical-Mechanical Polishing of Inlaid Copper Structures;Steigerwald;J. Electrochem. Soc.,1994

2. Tantalum, Copper and Damascene: The future of Interconnects;Singer;Semiconductor International,1998

3. Inlaid Copper Multilevel Interconnections Using Plnanarization by Chemical-Mechanical Polishing;Murarka,1993

4. Multilevel Pattern Effects in Copper CMP;Park,1999

5. Technological Advances in Fine Abrasive Processes;Komanduri;Annals of the CIRP,1997

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Process state estimation in chemical mechanical polishing (CMP) by inverse analysis of in-process data;CIRP Annals;2022

2. Hybrid CMP Slurry Supply System Using Ionization and Atomization;Applied Sciences;2021-03-03

3. Mechanical Abrasion by Bi-layered Pad Micro-Asperity in Chemical Mechanical Polishing;CIRP Annals;2021

4. Material removal efficiency improvement by orientation control of CMP pad surface asperities;Precision Engineering;2020-03

5. Polishing Wear;Friction, Lubrication, and Wear Technology;2017-12-31

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