Low-temperature photoluminescence characterization of defects formation in hydrogen and helium implanted silicon at post-implantation annealing-Reference-Cited by-同舟云学术

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Low-temperature photoluminescence characterization of defects formation in hydrogen and helium implanted silicon at post-implantation annealing

Published:2001-12 Issue: Volume:308-310 Page:181-184
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Mudryi A.V.,Korshunov F.P.,Patuk A.I.,Shakin I.A.,Larionova T.P.,Ulyashin A.G.,Job R.,Fahrner W.R.,Emtsev V.V.,Davydov V.Yu.,Oganesyan G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Hydrogen in Crystalline Semiconductors;Pearton,1992

2. Hydrogen passivation of multicrystalline silicon solar cells

3. Application of hydrogen ion beams to Silicon On Insulator material technology

4. Silicon on insulator material technology

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Si-based light emitters synthesized with Ge+ ion bombardment;Journal of Applied Physics;2021-10-21

2. Crystal defects in monocrystalline silicon induced by spot laser melting;Journal of Applied Physics;2020-03-07

3. Defects in Multicrystalline Si Wafers Studied by Spectral Photoluminescence Imaging, Combined with EBSD and Dislocation Mapping;Energy Procedia;2016-08

4. Hydrogen induced optically-active defects in silicon photonic nanocavities;Optics Express;2014-04-07

5. Distribution of radiative crystal imperfections through a silicon ingot;AIP Advances;2013-11

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