Shallow donors in silicon coimplanted with rare-earth ions and oxygen-Reference-Cited by-同舟云学术

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Shallow donors in silicon coimplanted with rare-earth ions and oxygen

Published:2001-12 Issue: Volume:308-310 Page:350-353
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Emtsev V.V.,Ammerlaan C.A.J.,Andreev B.A.,Oganesyan G.A.,Poloskin D.S.,Sobolev N.A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. A comparative study of donor formation in dysprosium, holmium, and erbium implanted silicon

2. Effects of oxygen coimplantation on the formation of donor centers in erbium-implanted silicon

3. Rare Earth Impurities and Impurity-Related Centers in Silicon

4. Semiconductor Statistics;Blakemore,1962

5. Differential evaluation of the Hall effect in silicon with oxygen-related donors

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1. Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions;Semiconductors;2019-02

2. Large enhancement of positive magnetoresistance by Ce doping in Si epitaxial thin films;Applied Physics Letters;2016-09-12

3. Effect of the annealing temperature on the low-temperature photoluminescence in Si:Er light-emitting structures grown by molecular-beam epitaxy;Semiconductors;2013-10

4. Structure and electrical activity of rare-earth dopants in semiconductors;Optical Materials;2006-05

5. Electrical activity of Er and Er-O centers in silicon;Physical Review B;2005-06-23

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