Rare Earth Impurities and Impurity-Related Centers in Silicon-Reference-Cited by-同舟云学术

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Rare Earth Impurities and Impurity-Related Centers in Silicon

Published:1999-08 Issue: Volume:69-70 Page:365-370
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Emtsev Valentin V.¹,Poloskin D.S.¹,Shek Elena I.¹,Sobolev N.A.¹,Michel Jürgen,Kimerling Lionel C.

Affiliation:

1. Russian Academy of Sciences

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.69-70.365.pdf

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrically active defects in erbium-implanted silicon: Effects of annealing under high hydrostatic pressures and electron irradiation;Materials Science and Engineering: B;2009-03

2. Shallow donors in silicon coimplanted with rare-earth ions and oxygen;Physica B: Condensed Matter;2001-12

3. Effects of oxygen coimplantation on the formation of donor centers in erbium-implanted silicon;Materials Science and Engineering: B;2001-04

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