Magnetic resonance studies of defects in GaN with reduced dislocation densities-Reference-Cited by-同舟云学术

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Magnetic resonance studies of defects in GaN with reduced dislocation densities

Published:2001-12 Issue: Volume:308-310 Page:51-57
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Glaser E.R.,Freitas J.A.,Braga G.C.,Carlos W.E.,Twigg M.E.,Wickenden A.E.,Koleske D.D.,Henry R.L.,Leszczynski M.,Grzegory I.,Suski T.,Porowski S.,Park S.S.,Lee K.Y.,Molnar R.J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. The role of dislocation scattering in n-type GaN films

2. UK Mishra;Kozodoy;Appl. Phys. Lett.,1998

3. Spatial distribution of the luminescence in GaN thin films

4. W.E. Carlos, J.A. Freitas Jr., M. Asif Khan, D.T. Olson, J.N. Kuznia, Phys. Rev. B 48 (1993) 17878, and references therein.

5. Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition

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