Unusual properties of the RY3 center in GaN-Reference-Cited by-同舟云学术

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Unusual properties of the RY3 center in GaN

Published:2019-07-18 Issue:4 Volume:100 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Reshchikov M. A.,Sayeed R. M.,Özgür Ü.,Demchenko D. O.,McNamara J. D.,Prozheeva V.,Tuomisto F.,Helava H.,Usikov A.,Makarov Yu.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.100.045204/fulltext

Reference42 articles.

1. Deep donor levels (DXcenters) in III‐V semiconductors

2. Metastability of the Isolated Arsenic-Antisite Defect in GaAs

3. Luminescence properties of defects in GaN

4. Carbon impurities and the yellow luminescence in GaN

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence from CdGa and HgGa acceptors in GaN;Journal of Applied Physics;2024-04-18

2. Nitrogen vacancy–acceptor complexes in gallium nitride;Journal of Applied Physics;2024-04-15

3. Photonic Properties of Thin Films Composed of Gallium Nitride Quantum Dots Synthesized by Nonequilibrium Plasma Aerotaxy;ACS Applied Materials & Interfaces;2024-03-28

4. Photoluminescence from defects in GaN;Gallium Nitride Materials and Devices XVIII;2023-03-15

5. On the Origin of the Yellow Luminescence Band in GaN;physica status solidi (b);2022-12-03

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