Defects agglomeration in the vicinity of hydrogen-related vacancy-type complexes in proton-implanted silicon
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Hydrogen interactions with defects in crystalline solids
2. The isotope study of the SiH absorption peaks in the FZSi grown in hydrogen atmosphere
3. Observation and Theory of the H2* Defect in Silicon
4. SiH stretch modes of hydrogen — vacancy defects in silicon
5. Identification of the hydrogen-saturated self-interstitials in silicon and germanium
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. X-Ray Diagnostics of Microstructure Defects of Silicon Crystals Irradiated by Hydrogen Ions;Technical Physics;2019-05
2. Simulation of the proton implantation process in silicon;physica status solidi (c);2016-07-19
3. Ellipsometry, FTIR, Raman and X-Ray Spectroscopy Analysis of PECVD a-Si1-xCx:H Film;Spectroscopy Letters;2010-04-30
4. Behavior of implanted hydrogen in thermally stimulated blistering in silicon;Radiation Effects and Defects in Solids;2003-11
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