Behavior of implanted hydrogen in thermally stimulated blistering in silicon
Author:
Affiliation:
1. a Russian Research Center “Kurchatov' Institute”, Institute of Information Technologies , Kurchatov' sq. 1, Moscow , Russia , 123182
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation
Link
https://www.tandfonline.com/doi/pdf/10.1080/1042015021000043854
Reference35 articles.
1. Separation of silicon wafers by the smart-cut method
2. Si and SiC layer transfer by high temperature hydrogen implantation and lower temperature layer splitting
3. Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates
4. Transfer of 3 in GaAs film on silicon substrate by proton implantation process
5. Ion implantation induced selective area exfoliation of InP and GaAs
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