Ellipsometry, FTIR, Raman and X-Ray Spectroscopy Analysis of PECVD a-Si1-xCx:H Film
Author:
Publisher
Informa UK Limited
Subject
Spectroscopy,Atomic and Molecular Physics, and Optics,Analytical Chemistry
Link
http://www.tandfonline.com/doi/pdf/10.1080/00387010903348276
Reference26 articles.
1. PECVD silicon carbide deposited at different temperature
2. Huran , J. ; Hotovy , I. ; Dubecky , F. ; Balalykin , N. I. N doped a-SiC:H Films Deposited by PECVD and Annealed by Pulse Electron Beam . SIMC 13th International Conference , 2004 , 93 – 97 .
3. Characterization of nitrogen-doped amorphous silicon carbide thin films
4. Growth of large high-quality SiC single crystals
5. Hydrogenated amorphous and crystalline SiC thin films grown by RF-PECVD and thermal MOCVD; comparative study of structural and optical properties
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