Behavior of electrically active point defects in irradiated MOCVD n-GaN-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Behavior of electrically active point defects in irradiated MOCVD n-GaN

Published:1999-12 Issue: Volume:273-274 Page:101-104
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Emtsev V.V,Davydov V.Yu,Kozlovskii V.V,Poloskin D.S,Smirnov A.N,Shmidt N.M,Usikov A.S

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Raman scattering from LO phonon‐plasmon coupled modes in gallium nitride

2. V.V. Emtsev et al., Mater. Sci. Forum 258–263 (Trans Tech Publications, Switzerland, 1997) 1143–1148.

3. Electron Hall mobility of n‐GaN

4. Atomic geometry and electronic structure of native defects in GaN

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Fluence Proton-Induced Degradation on AlGaN/GaN High-Electron-Mobility Transistors;IEEE Transactions on Nuclear Science;2020-07

2. Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors;Journal of Applied Physics;2018-04-28

3. Optical and electrical investigation of Ar+-irradiated GaN;Applied Physics Express;2014-10-22

4. Time-resolved luminescence studies of proton-implanted GaN;Applied Physics Letters;2009-09-14

5. Chemical origin of the yellow luminescence in GaN;Journal of Applied Physics;2002-05

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP