Auger electron spectroscopy study of SiC thin films deposited on silicon
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference10 articles.
1. Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
2. 6H-silicon carbide devices and applications
3. Epitaxial growth and electric characteristics of cubic SiC on silicon
4. Advanced electron cyclotron resonance chemical vapor deposition SiC coatings and x-ray mask membranes
5. Growth and characterization of 3C-SiC films on Si substrates by reactive magnetron sputtering; effects of CH 4 partial pressure on the crystalline quality, structure and stoichiometry
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1. Scanning Auger microscopy for high lateral and depth elemental sensitivity;Journal of Electron Spectroscopy and Related Phenomena;2013-12
2. AES Studies of Heteroepitaxial SiC Films Deposited on Si and on Sapphire Substrates by MOCVD;Eurasian Chemico-Technological Journal;2013-05-13
3. Controlled synthesis of SiC nanoparticles from surface silicon contamination;Thin Solid Films;2013-01
4. Optical and Tribological Properties of Silicon Carbide Thin Films Grown by Reactive DC Magnetron Sputtering;Key Engineering Materials;2011-07
5. Influence of electron-beam and ultraviolet treatments on low-k porous dielectrics;Journal of Applied Physics;2006-12-15
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