Growth and characterization of 3C-SiC films on Si substrates by reactive magnetron sputtering; effects of CH 4 partial pressure on the crystalline quality, structure and stoichiometry-Reference-Cited by-同舟云学术

Growth and characterization of 3C-SiC films on Si substrates by reactive magnetron sputtering; effects of CH 4 partial pressure on the crystalline quality, structure and stoichiometry

Published:1995-06 Issue:1-2 Volume:261 Page:317-321
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Wahab Q.,Hultman L.,Ivanov I.P.,Willander M.,Sundgren J.-E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

2. IVA-8 heteroepitaxial growth of cubic silicon carbide on foreign substrates

3. Epitaxial growth and doping of and device development in monocyrstalline β-SiC semiconductor thin films

4. Epitaxial growth of β-SiC single crystals by successive two-step CVD

5. Amorphous and crystalline silicon carbide;Nishino,1989

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