Influence of nitrogen concentration on conductivity of N-doped a-SiC:H films deposited by PECVD
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference5 articles.
1. Landoldt-Bornstein, Numerical Data and Functional Relationships in Science and Technology, Springer, Berlin, 1986.
2. Plasma‐enhanced chemical vapor deposition of a‐SiC:H films from organosilicon precursors
3. Preparation of Microcrystalline Silicon Carbide Films by Hydrogen-Radical-Enhanced Chemical Vapor Deposition Using Tetramethylsilane
4. Recent Progress of Amorphous Silicon Solar Cell Technology
5. Photoelectric application of a-Si:H and related material-image devices
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1. Effect of plasma power on properties of hydrogenated amorphous silicon carbide hardmask films deposited by PECVD;Vacuum;2020-04
2. High-rate, room-temperature synthesis of amorphous silicon carbide films from organo-silicon in high-density helicon wave plasma;Vacuum;2019-06
3. Amorphous Carbon-Based Semiconductor Capable of Controlling Its Optical Gap and Conductivity by Incorporating Silicon and Nitrogen Atoms;ECS Journal of Solid State Science and Technology;2016
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