Direct observation, by the matrix isolation technique, of nitric oxide effects in low-pressure silane discharges
Author:
Publisher
Elsevier BV
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Reference32 articles.
1. Silane dissociation mechanisms and thin film formation in a low pressure multipole dc discharge
2. Mono‐ and disilicon radicals in silane and silane‐argon dc discharges
3. On the balance between silylene and silyl radicals in rf glow discharges in silane: The effect on deposition rates ofa‐Si:H
4. Decomposition kinetics of a static direct current silane glow discharge
5. Mechanism of the direct current plasma discharge decomposition of disilane
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Heats of formation of chlorosilanes (SiHmCln) calculated by ab initio molecular orbital methods;The Journal of Physical Chemistry;1993-08
2. Kinetics of the SiH3 + O2 and SiH3 + NO2 reactions;Chemical Physics Letters;1993-04
3. Infrared detection by the matrix-isolation technique of radicals produced in deposition plasmas: germane;Chemical Physics Letters;1991-04
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