Gallium nitride-Reference-Cited by-同舟云学术

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Gallium nitride

Published:2019 Issue: Volume: Page:351-399
ISSN:
Container-title:Single Crystals of Electronic Materials
language:
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Author:

Pimputkar Siddha

Publisher

Elsevier

Reference165 articles.

1. The preparation and properties of vapor-deposited single-crystal-line Gan;Maruska;Appl. Phys. Lett.,1969

2. Novel metalorganic chemical vapor deposition system for GaN growth;Nakamura;Appl. Phys. Lett.,1991

3. GaN growth using GaN buffer layer;Nakamura;Jpn. J. Appl. Phys.,1991

4. Thermal annealing effects on P-type Mg-doped GaN films;Nakamura;Jpn. J. Appl. Phys.,1992

5. Hole compensation mechanism of P-type GaN films;Nakamura;Jpn. J. Appl. Phys.,1992

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1. Microanalytical investigations of gallium occurrence and distribution in zinc refinery residue;Journal of Materials Science;2024-07-30

2. Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential;Materials;2024-06-25

3. Performance Comparison of Wide Band Gap Semiconductors Based Multilevel Converters for Grid Application;2024 IEEE 22nd Mediterranean Electrotechnical Conference (MELECON);2024-06-25

4. Analysis of radiation defects in gallium nitride using deep level transient spectra and first principles methods;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-12

5. On the solubility of boron nitride in supercritical ammonia-sodium solutions;Journal of Crystal Growth;2023-11

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