Investigation of defects in high-energy heavy ion implanted GaAs-Reference-Cited by-同舟云学术

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Investigation of defects in high-energy heavy ion implanted GaAs

Published:2000-01 Issue:1 Volume:52 Page:39-45
ISSN:0969-8043
Container-title:Applied Radiation and Isotopes
language:en
Short-container-title:Applied Radiation and Isotopes

Author:

Chen Z.Q.,Wang Z.,Wang S.J.,Hou M.D.

Publisher

Elsevier BV

Subject

Radiation

Reference27 articles.

1. An investigation by resistance and photoluminescence measurements of high energy heavy-ion irradiated GaAs;Carin;Nucl. Instrum. Methods,1992

2. Positron annihilation studies of defect properties in semi-insulating GaAs;Chen;Phys. Status Solidi A,1996

3. Gallium vacancies and gallium antisites as acceptors in electron-irradiated semi-insulating GaAs;Corbel;Phys. Rev.,1992

4. Positron lifetime and 2D-ACAR studies of divacancies in Si;Hasegawa;Appl. Phys.,1995

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. STM study of ion tracks created in GaAs by GeV Xe ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-08

2. Intrinsic Defects: Structure;Charged Semiconductor Defects

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