An investigation by resistance and photoluminescence measurements of high-energy heavy-ion irradiated GaAs
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
1. Irradiation-induced defects inp-type GaAs
2. Selective saturation of paramagnetic defects in electron‐ and neutron‐irradiated GaAs
3. Electron spin resonance of AsGaantisite defects in fast neutron‐irradiated GaAs
4. Electrical behavior of fast neutron irradiated semi‐insulating GaAs during thermal recovery
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3. Effect of high electronic energy deposition in semiconductors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-08
4. Behaviour of a nanometric SnO2 powder under swift heavy-ion irradiation: From sputtering to splitting;Philosophical Magazine A;2000-10
5. Investigation of defects in high-energy heavy ion implanted GaAs;Applied Radiation and Isotopes;2000-01
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