Gallium vacancies and gallium antisites as acceptors in electron-irradiated semi-insulating GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.3386/fulltext
Reference48 articles.
1. An electron-trapping defect level associated with the 235K annealing stage in electron-irradiation n-GaAs
2. Detection of Ga vacancies in electron irradiated GaAs by positrons
3. Defect production in electron‐irradiated,n‐type GaAs
4. The donor nature of the main electron traps in electron-irradiated n-type GaAs
5. Identification of the arsenic vacancy defect in electron-irradiated GaAs
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