Chapter 11 Optical Properties of GaN
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Elsevier
Reference176 articles.
1. Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED
2. Growth of GaN and AlGaN for UV/blue p-n junction diodes
3. Widegap Column‐ III Nitride Semiconductors for UV/Blue Light Emitting Devices
4. Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on ($11 \bar{2}0$) and (0001) Sapphire Substrates
5. Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE
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1. Optical axis misalignment detection by noncollinear second-harmonic generation;Journal of the Optical Society of America B;2013-12-04
2. Growth behavior of GaN film along non-polar [11–20] directions;Physica B: Condensed Matter;2011-01
3. III-V Nitrides and Silicon Carbide as Optoelectronic Materials;The Handbook of Photonics, Second Edition;2006-12-21
4. Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates;Journal of Applied Physics;2006-11-15
5. Group III Nitrides;Springer Handbook of Electronic and Photonic Materials;2006
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