Growth of GaN and AlGaN for UV/blue p-n junction diodes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
3. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
4. Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer
5. Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE
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