Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2386940
Reference49 articles.
1. Optical Properties of Strained AlGaN and GaInN on GaN
2. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells
3. Giant electric fields in unstrained GaN single quantum wells
4. Spontaneous polarization and piezoelectric field inGaN/Al0.15Ga0.85Nquantum wells: Impact on the optical spectra
5. High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
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