Si1–yCy and Si1–x–yGexCy Alloy Layers
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Publisher
Elsevier
Reference118 articles.
1. Photon-assisted tunnelling through a quantum dot
2. Defect‐free band‐edge photoluminescence and band gap measurement of pseudomorphic Si1−x−yGexCy alloy layers on Si (100)
3. Optical and electrical properties of Si1−x−yGexCy thin films and devices
4. Photoluminescence and electroluminescence of SiGe dots fabricated by island growth
5. Chemical vapor deposition of heteroepitaxial Si1−x−yGexCy films on (100)Si substrates
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dielectric functions, elasto-optical effects, and critical-point parameters of biaxially stressed Si1−yCyalloys on Si (0 0 1);Semiconductor Science and Technology;2006-11-28
2. Hole effective mass in strained Si1−xCx alloys;Journal of Applied Physics;2004-11
3. Theoretical analysis of Si1−x−yGexCy near-infrared photodetectors;Optical Engineering;2003-07-01
4. High-Pressure Photoluminescence Studies of Pseudomorphic Si1-yCy/Si MQW Structures;physica status solidi (b);2000-05
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