Radiation-induced amorphization and recrystallization of α-SiC single crystal-Reference-Cited by-同舟云学术

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Radiation-induced amorphization and recrystallization of α-SiC single crystal

Published:1999-05 Issue: Volume:271-272 Page:11-14
ISSN:0022-3115
Container-title:Journal of Nuclear Materials
language:en
Short-container-title:Journal of Nuclear Materials

Author:

Kawatsura K,Shimatani N,Igarashi T,Inoue T,Terazawa N,Arai S,Aoki Y,Yamamoto S,Narumi K,Naramoto H,Horino Y,Mokuno Y,Fujii K

Publisher

Elsevier BV

Subject

Nuclear Energy and Engineering,General Materials Science,Nuclear and High Energy Physics

Reference15 articles.

1. Disorder produced in SiC by ion bombardment

2. O.J. Marsh, Silicon Carbide-1973, University of South Carolina, Columbia, 1974, p. 471

3. Raman scattering study of ion bombardment induced amorphization of SiC

4. Structural alterations in SiC as a result of Cr+ and N+ implantation

5. Ion beam modification of 6H/15R SiC crystals

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation Resistance of Nanocrystalline Silicon Carbide;Ceramic Transactions Series;2011-09-09

2. Molecular dynamics simulation of irradiation-induced amorphization of cubic silicon carbide;Journal of Nuclear Materials;2001-02

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