Piezoelectric InGaAs/GaAs (111)B multiple quantum well photodiodes: optoelectronic properties by electron beam induced current and cathodoluminescence-Reference-Cited by-同舟云学术

Piezoelectric InGaAs/GaAs (111)B multiple quantum well photodiodes: optoelectronic properties by electron beam induced current and cathodoluminescence

Published:1999-04 Issue:4-5 Volume:30 Page:413-417
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Romero M.J.,Araújo D.,Sánchez-Rojas J.L.,Calleja E.,Muñoz E.,Garcı́a R.

Publisher

Elsevier BV

Subject

General Engineering

Reference9 articles.

1. Conduction‐band engineering in piezoelectric [111] multiple quantum wellp‐i‐nphotodiodes

2. Comparison of optical nonlinearities in piezoelectric strained [111]‐ and [001]‐grown (In,Ga)As/(Al,Ga)As quantum wells

3. Magnitude, origin, and evolution of piezoelectric optical nonlinearities in strained [111]B InGaAs/GaAs quantum wells

4. Memory effects on piezoelectric InGaAs/GaAs MQW PIN diodes

5. Photoinhibition of the quantum confined Stark effect in piezoelectric multiple quantum wells

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