Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces-Reference-Cited by-同舟云学术

Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

Published:2014-11-03 Issue:18 Volume:105 Page:181902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ledentsov N. N.¹,Shchukin V. A.¹,Lyytikäinen J.²,Okhotnikov O.²,Shernyakov Yu. M.³,Payusov A. S.³,Gordeev N. Yu.³,Maximov M. V.³,Schlichting S.⁴,Nippert F.⁴^ORCID,Hoffmann A.⁴

Affiliation:

1. VI Systems GmbH, Hardenbergstr. 7, Berlin D-10623, Germany

2. Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33720, Finland

3. A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021, Russia

4. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin D-10623, Germany

Funder

EU FP7 Program

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4900938

Reference16 articles.

1. Importance of Second-Order Piezoelectric Effects in Zinc-Blende Semiconductors

2. Piezoelectric InGaAs/GaAs (111)B multiple quantum well photodiodes: optoelectronic properties by electron beam induced current and cathodoluminescence

3. Orientation dependence of the Si doping of GaAs grown by molecular beam epitaxy

4. Direct synthesis of corrugated superlattices on non-(100)-oriented surfaces

5. Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces

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