Optical anisotropy and photoluminescence temperature dependence for self-assembled InAs quantum islands grown on vicinal (001) InP substrates
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference13 articles.
1. MBE and MOCVD growth and properties of self-assembling quantum dot arrays in III-V semiconductor structures
2. Initial growth stage and optical properties of a three‐dimensional InAs structure on GaAs
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4. InAs self‐assembled quantum dots on InP by molecular beam epitaxy
5. Dynamics of island formation in the growth of InAs/InP quantum wells
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1. Femtosecond depolarization of photoluminescence from InAs: Comparison with Cu and monolayer graphene;Physical Review B;2023-12-01
2. Temperature dependence of the photoluminescence spectra from InAs(P)/InP multilayers containing thick quantum dots: Dot-size-dependent carrier dynamics;Physical Review B;2011-06-06
3. Size and shape effects on excitons and biexcitons in single InAs∕InP quantum dots;Journal of Applied Physics;2006-10
4. InAs nanowire formation on InP(001);Journal of Applied Physics;2006
5. Formation of quantum wires and quantum dots on buffer layers grown on InP substrates;Journal of Crystal Growth;2003-08
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