Formation of quantum wires and quantum dots on buffer layers grown on InP substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Novel Infrared Quantum Dot Lasers: Theory and Reality
3. Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers
4. Low-threshold quantum dot lasers with 201 nm tuning range
5. Effects of the matrix on self-organization of InAs quantum nanostructures grown on InP substrates
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1. Hybrid Structure of Semiconductor Quantum Well Superlattice and Quantum Dot;Quantum Science and Technology;2022
2. Shape transition in InAs nanostructures formed by Stranski-Krastanow growth mode on InP (001) substrate;Applied Physics Letters;2019-04-29
3. Applications of III-V Semiconductor Quantum Dots in Optoelectronic Devices;Molecular Beam Epitaxy;2019-02-08
4. Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy;Journal of Applied Physics;2018-05-28
5. Laser field induced optical gain in a group III-V quantum wire;The European Physical Journal D;2016-08
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