Investigation of trapping levels in standard, nitrogenated and oxygenated Si p–n junctions by thermally stimulated currents-Reference-Cited by-同舟云学术

Investigation of trapping levels in standard, nitrogenated and oxygenated Si p–n junctions by thermally stimulated currents

Published:2000-01 Issue:2-3 Volume:439 Page:303-309
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Pintilie I.,Petre D.,Pintilie L.,Tivarus C.,Petris M.,Botila T.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference20 articles.

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4. Influence of oxygen and nitrogen on point defect aggregation in silicon single crystals

5. S. Watts, Paper presented at the Proceeding vol. “Detector Seminar” of Second Workshop on Radiation Hardening of Silicon Detectors, CERN-Geneve, 4–5 February, 1997, pp. 1.

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3. Thermally stimulated current method applied to highly irradiated silicon diodes;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2002-01

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