Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p–n Si junctions using optical charging spectroscopy-Reference-Cited by-同舟云学术

Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p–n Si junctions using optical charging spectroscopy

Published:2000-01 Issue:2-3 Volume:439 Page:221-227
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Pintilie I.,Tivarus C.,Botila T.,Petre D.,Pintilie L.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference19 articles.

1. Effects of fast neutron radiation on the electrical properties of silicon detectors

2. Observation of a bistable defect generated and activated by heat treatments in irradiated high resistivity silicon detectors

3. E. Borchi, M. Bruzzi, La Rivista del Nuovo Cimento, Vol. 17 (11) Editrice Compositore, Bologna, 1994.

4. T. Schultz, Ph.D thesis, Universität Hamburg, 1996.

5. Electrical properties and charge collection efficiency for neutron-irradiated p-type and n-type silicon detectors

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1. Defect characterization studies on irradiated boron-doped silicon pad diodes and Low Gain Avalanche Detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-03

2. Thermally stimulated current method applied to highly irradiated silicon diodes;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2002-01

3. Investigation of trapping levels in standard, nitrogenated and oxygenated Si p–n junctions by thermally stimulated currents;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2000-01