Charge collection efficiency in SI GaAs grown from melts with variable composition as a material for solar neutrino detection-Reference-Cited by-同舟云学术

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Charge collection efficiency in SI GaAs grown from melts with variable composition as a material for solar neutrino detection

Published:2000-01 Issue:2-3 Volume:439 Page:634-646
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Verbitskaya E.,Eremin V.,Ivanov A.,Strokan N.,Vasilèv V.,Markov A.,Polyakov A.,Gavrin V.,Kozlova Yu.,Veretenkin E.,Bowles T.J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. The ATLAS Technical Proposal CERN/LHCC, 94-43, December 1994.

2. Investigation of the radiation damage of GaAs detectors by protons, pions and neutrons

3. Present status of undoped semi-insulating LEC bulk GaAs as a radiation spectrometer

4. Evaluation of active layer properties and charge collection efficiency of GaAs particle detectors

5. Stoichiometry‐controlled compensation in liquid encapsulated Czochralski GaAs

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1. Anomalous current transients related to defect discharge in irradiated silicon diodes;Physical Review B;2004-11-15

2. Characteristics of nuclear radiation detectors based on semi-insulating gallium arsenide;Semiconductors;2004-04

3. Electrical properties of semi-insulating GaAs crystals grown by vertical gradient freeze and liquid encapsulated Czochralski techniques;Solid-State Electronics;2004-01

4. A comparative study of EL2 and other deep centers in undoped SI GaAs using optical absorption spectra and photoconductivity measurements;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2003-10

5. Comparison of deep levels spectra and electrical properties of GaAs crystals grown by vertical Bridgeman and by liquid encapsulated Czochralski methods;Solid-State Electronics;2002-02

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