Comparison of deep levels spectra and electrical properties of GaAs crystals grown by vertical Bridgeman and by liquid encapsulated Czochralski methods-Reference-Cited by-同舟云学术

Comparison of deep levels spectra and electrical properties of GaAs crystals grown by vertical Bridgeman and by liquid encapsulated Czochralski methods

Published:2002-02 Issue:2 Volume:46 Page:269-277
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Markov A.V,Polyakov A.Y,Smirnov N.B,Bolsheva Y.N,Govorkov A.V,Sharonov B.N

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Semi-insulating III–V materials;Miyazawa,1986

2. Semi-insulating III–V materials;Makram-Ebeid,1984

3. Semi-insulating III–V materials;Inada,1986

4. Liquid encapsulated, vertical bridgman growth of large diameter, low dislocation density, semi-insulating GaAs

5. Liquid encapsulated, vertical Bridgman growth of GaAs crystal with uniform EL2 concentration

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