Liquid encapsulated, vertical bridgman growth of large diameter, low dislocation density, semi-insulating GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. The theory and practice of dislocation reduction in GaAs and InP
2. A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs Crystals
3. Low dislocation density, large diameter, liquid encapsulated Czochralski growth of GaAs
4. A novel application of the vertical gradient freeze method to the growth of high quality III–V crystals
5. The Production of High Quality, III-V Compound Semiconductor Crystals
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1. High crystal quality of vertical Bridgman and edge-defined film-fed growth β-Ga2O3 bulk crystals investigated using high-resolution X-ray diffraction and synchrotron X-ray topography;Japanese Journal of Applied Physics;2022-04-14
2. Growth of (1 0 0), (0 1 0) and (0 0 1) β-Ga2O3 single crystals by vertical Bridgman method;Journal of Crystal Growth;2021-02
3. 50 mm diameter Sn-doped (0 0 1) β-Ga2O3 crystal growth using the vertical Bridgeman technique in ambient air;Journal of Crystal Growth;2020-09
4. 2-inch diameter (1 0 0) β-Ga2O3 crystal growth by the vertical Bridgman technique in a resistance heating furnace in ambient air;Journal of Crystal Growth;2020-09
5. LiTaO3 Single Crystal Growth by the Vertical Bridgman Technique;Crystal Research and Technology;2018-08-14
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