Investigation of the radiation damage of GaAs detectors by protons, pions and neutrons

Author:

Tenbusch F,Arbabi S,Braunschweig W,Chu Z,Krais R,Kubicki Th,Lübelsmeyer K,Rente C,Syben O,Toporowski M,Wittmer B,Xiao W.J

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference14 articles.

1. Investigation of the radiation damage of GaAs detectors by neutrons and photons

2. Development of GaAs detectors at RWTH Aachen;Toporowski,1994

3. American Xtal Technology SI-GaAs wafer product, 6780 Sierra Court, Dublin, CA 94568, USA.

4. Freiberger Compound Materials GmbH, 09584 Freiberg, Saxony, Germany.

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1. Radiation damage study of GaAs detectors irradiated by fast neutrons;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2006-07

2. Charge collection efficiency in SI GaAs grown from melts with variable composition as a material for solar neutrino detection;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2000-01

3. Low temperature annealing effects on the performance of proton irradiated GaAs detectors;Nuclear Physics B - Proceedings Supplements;1999-08

4. Radiation damage tests of GaAs HV switches for MSGCs bias control;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1999-04

5. Electric field and plasma effects on proton-irradiated GaAs detector performance;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1998-06

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