Author:
Tenbusch F,Arbabi S,Braunschweig W,Chu Z,Krais R,Kubicki Th,Lübelsmeyer K,Rente C,Syben O,Toporowski M,Wittmer B,Xiao W.J
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
1. Investigation of the radiation damage of GaAs detectors by neutrons and photons
2. Development of GaAs detectors at RWTH Aachen;Toporowski,1994
3. American Xtal Technology SI-GaAs wafer product, 6780 Sierra Court, Dublin, CA 94568, USA.
4. Freiberger Compound Materials GmbH, 09584 Freiberg, Saxony, Germany.
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