Radiation damage tests of GaAs HV switches for MSGCs bias control-Reference-Cited by-同舟云学术

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Radiation damage tests of GaAs HV switches for MSGCs bias control

Published:1999-04 Issue:1 Volume:426 Page:216-220
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Bisogni M.G.,Bottigli U.,Fantacci M.E.,Stefanini A.,Bertolucci E.,Conti M.,Russo P.,Cola A.,Quaranta F.,Vasanelli L.,Stefanini G.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference14 articles.

1. M.G. Bisogni et al., Proc. 5th Int. Workshop on Gallium Arsenide Detectors and Related Compounds, 1997, Cividale del Friuli (Udine), Italy.

2. A. Cola et al., Nucl. Instr. and Meth. A 418 (1998) 434.

3. A. Rosen, F. Zutaten (Eds.), High-power Optically Activated Solid-State Switches, Artech House, Portland, 1994.

4. K. Gill et al., CMS Note 1997/102.

5. S.R. Amendolia et al., Proc. 4th Int. Workshop on Gallium Arsenide Detectors and Related Compounds, 1996, Glasgow, UK.

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