Comparison of signals obtained from oxygenated and non-oxygenated silicon microstrip detectors after irradiation to 3×1014 p cm−2-Reference-Cited by-同舟云学术

Comparison of signals obtained from oxygenated and non-oxygenated silicon microstrip detectors after irradiation to 3×1014 p cm−2

Published:2001-04 Issue:1-3 Volume:461 Page:226-228
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Robinson D.,Allport P.P.,Beck G.A.,Carter A.A.,Carter J.R.,Casse G.,Morgan D.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference5 articles.

1. Third RD48 Status Report, CERN/LHCC 2000-009, LEB Status Report/RD48, 31 December 1999.

2. Micron Semiconductor Ltd, 1 Royal Buildings, Marlborough Road, Churchill Industrial Estate, Lancing, Sussex BN15 8UN, UK.

3. G. Casse et al., A comparative study of oxygenated and non-oxygenated Si pad diodes, miniature and large area microstrip detectors, The Proceedings of the fourth International Symposium on Development and Application of Semiconductor Tracking Detectors, Hiroshima, March 22–25, 2000, submitted for publication.

4. Introduction of high oxygen concentrations into silicon wafers by high-temperature diffusion

5. SCTA-a rad-hard BiCMOS analogue readout ASIC for the ATLAS Semiconductor Tracker

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