Author:
Anghinolfi F.,Dabrowski W.,Delagnes E.,Kaplon J.,Koetz U.,Jarron P.,Lugiez F.,Posch C.,Roe S.,Weilhammer P.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Cited by
63 articles.
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1. Evaluating the influence of MCM-D post-processing on silicon microstrip sensors;Journal of Instrumentation;2013-08-07
2. Effects of Varying Substrate Thickness on the Collected Charge From Highly Irradiated Planar Silicon Detectors;IEEE Transactions on Nuclear Science;2011-12
3. Update of the annealing scenario for irradiated silicon p-in-n microstrip sensors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2011-12
4. Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2011-04
5. Evidence of enhanced signal response at high bias voltages in planar silicon detectors irradiated up to 2.2×1016neqcm−2;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2011-04