Low-noise design criteria for detector readout systems in deep submicron CMOS technology-Reference-Cited by-同舟云学术

Low-noise design criteria for detector readout systems in deep submicron CMOS technology

Published:2002-02 Issue:1-2 Volume:478 Page:362-366
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Manghisoni M,Ratti L,Re V,Speziali V

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference8 articles.

1. G. Anelli, et al., Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments: practical design aspects, IEEE Trans. Nucl. Sci. 45 (4) Issue 6, Part 1 (1999) 1690–1696.

2. Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip;Snoeys;Nucl. Instr. and Meth.,2000

3. Noise in solid state devices and circuits;Van der Ziel,1986

4. Experimental studies of the noise properties of a deep submicron CMOS process

5. Noise characterization of a 0.25μm CMOS technology for the LHC experiments;Anelli;Nucl. Instr. and Meth.,2001

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