Author:
Anelli G.,Faccio F.,Florian S.,Jarron P.
Subject
Instrumentation,Nuclear and High Energy Physics
Reference22 articles.
1. Radiation Effects in MOS Capacitors with Very Thin Oxides at 80degK
2. Generation of Interface States by Ionizing Radiation in Very Thin MOS Oxides
3. IEEE Trans. Nucl. Sci.;Anelli;NS-46,1999
4. IEEE Trans. Nucl. Sci.;Campbell;NS-46,1999
5. E. Vittoz, Notes of the Advanced Engineering Course on CMOS & BiCMOS IC Design, Lausanne, Switzerland, 19–23 August 1996.
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