Author:
Croitoru N.,David G.,Rancoita P.G.,Rattaggi M.,Seidman A.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
6 articles.
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1. Can the electric field in radiation-damaged silicon pad diodes be determined by admittance and current measurements?;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2022-04
2. Particle interaction and displacement damage in silicon devices operated in radiation environments;Reports on Progress in Physics;2007-03-08
3. Evaluation of possible equivalent circuits for the description of the CV characteristics of heavily irradiated Si diodes;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2005-10
4. Frequency-temperature scaling of the CV characteristics for irradiated Si detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2001-07
5. Frequency dependence of ac conductance of neutron irradiated silicon detectors to fluences up to 1016 n/cm2;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-02