Frequency-temperature scaling of the CV characteristics for irradiated Si detectors-Reference-Cited by-同舟云学术

Frequency-temperature scaling of the CV characteristics for irradiated Si detectors

Published:2001-07 Issue:3 Volume:466 Page:456-463
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Campbell D.,Chilingarov A.,Sloan T.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference14 articles.

1. Studies of frequency dependent C-V characteristics of neutron irradiated p/sup +/-n silicon detectors

2. Effect of radiation induced defects on the capacitance of silicon detectors

3. L. Beattie et al., Dependence of depletion voltage and capacitance on temperature and frequency in heavily irradiated silicon diodes, RD-48 Technical Note 97/4, 1997. See also L.J. Beattie, A macroscopic evaluation of heavily irradiated silicon diode material for application in silicon detectors at LHC, Ph.D. Thesis, Lancaster University, 1998, RAL-TH-1998-015.

4. M. McPherson, Irradiated silicon detectors as relaxation devices, Ph.D. Thesis, Lancaster University, 1997.

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