Can the electric field in radiation-damaged silicon pad diodes be determined by admittance and current measurements?-Reference-Cited by-同舟云学术

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Can the electric field in radiation-damaged silicon pad diodes be determined by admittance and current measurements?

Published:2022-04 Issue: Volume:1028 Page:166360
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Klanner R.,Schwandt J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference20 articles.

1. Semiconductor Material and Device Characterization;Schroder,2006

2. On the weighting field of irradiated silicon detectors;Schwandt;Nucl. Instr. Methods A,2020

3. Capacitance recovery in neutron-irradiated silicon diodes by majority and minority carrier trapping;Wilson;IEEE Trans. Nucl. Sci.,1968

4. Admittance studies of neutron-irradiated slicon p+n diodes;Tokuda;J. Appl. Phys.,1977

5. Admittance spectroscopy of deep impurity levels: ZnTe Schottky barriers;Losee;J. Appl. Phys.,1972

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of the V20 state in neutron-irradiated silicon using photon-absorption measurements;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-08

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