A comparative study of oxygenated and non-oxygenated Si pad diodes, miniature and large area microstrip detectors-Reference-Cited by-同舟云学术

A comparative study of oxygenated and non-oxygenated Si pad diodes, miniature and large area microstrip detectors

Published:2001-07 Issue:2 Volume:466 Page:335-344
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Casse G.,Allport P.P.,Booth P.S.L.,Greenall A.,Jackson J.N.,Jones T.J.,Smith N.A.,Turner P.R.,Carter J.R.,Morgan D.,Robinson D.,Beck G.A.,Carter A.A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. Introduction of high oxygen concentrations into silicon wafers by high-temperature diffusion

2. 2nd RD48 STATUS REPORT, CERN LHCC 98-39, LEB Status Report/RD48, 21 October 1998.

3. ATLAS Inner Detector Technical Design Report, CERN/LHCC/97-17.

4. Radiation studies and operational projections for silicon in the ATLAS inner detector

5. Study of characteristics of silicon detectors irradiated with 24 GeV/c protons between −20°C and +20°C

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