Concentration profiles and electrical characterization of high energy phosphorus implants in 〈100〉 silicon-Reference-Cited by-同舟云学术

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Concentration profiles and electrical characterization of high energy phosphorus implants in 〈100〉 silicon

Published:1991-09 Issue:1 Volume:10 Page:67-73
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Galvagno G.,Cacciato A.,Benyaïch F.,Raineri V.,Priolo F.,Rimini E.,Capizzi S.,Romano P.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. Alpha-particle-induced soft error rate in VLSI circuits

2. Range distributions of MeV implants in silicon

3. Profile studies of MeV ions implanted into Si

4. Range distributions of MeV implants in silicon II

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analytical Techniques;Ion Implantation: Basics to Device Fabrication;1995

2. Orientation Phenomena in MeV Implants of P IN Si;Crucial Issues in Semiconductor Materials and Processing Technologies;1992

3. Basic Aspects of Ion Implantation;Crucial Issues in Semiconductor Materials and Processing Technologies;1992

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