In-situ investigations of radical kinetics in the deposition of hydrogenated amorphous silicon films
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference9 articles.
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1. Fourier transform infrared phase-modulated ellipsometry for in situ diagnostics of plasma–surface interactions;Journal of Physics D: Applied Physics;2004-02-24
2. Surface Reaction Probabilities of Silicon Hydride Radicals in SiH4/H2 Thermal Chemical Vapor Deposition;Industrial & Engineering Chemistry Research;2002-04-04
3. A modified molecular beam instrument for the imaging of radicals interacting with surfaces during plasma processing;Review of Scientific Instruments;1997-04
4. Measurement and Calculation of $\bf SiH_{2}$ Radical Density in $\bf SiH_{4}$ and $\bf Si_{2}H_{6}$ Plasma for the Deposition of Hydrogenated Amorphous Silicon Thin Films;Japanese Journal of Applied Physics;1995-08-15
5. Detection of H Atoms in RF-DischargeSiH4,CH4andH2Plasmas by Two-Photon Absorption Laser-Induced Fluorescence Spectroscopy;Japanese Journal of Applied Physics;1994-07-30
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