Improved chemical beam epitaxy using triisopropylgallium-Reference-Cited by-同舟云学术

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Improved chemical beam epitaxy using triisopropylgallium

Published:1993-02 Issue:1-3 Volume:17 Page:15-20
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Lane P.A.,Martin T.,Whitehouse C.R.,Freer R.W.,Houlton M.R.,Calcott P.D.J.,Lee D.,Pitt A.D.,Jones A.C.,Rushworth S.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference23 articles.

1. Effect of source chemistry and growth parameters on AlGaAs grown by metalorganic molecular beam epitaxy

2. 3rd Int. Conf. on Chemical Beam Epitaxy;Lane,1991

3. Carbon incorporation in AlGaAs grown by CBE

4. Gas Source Melecular Beam Epitaxy Growth of High Quality AlGaAs Using Trimethylamine Alane as the Aluminum Source

5. The search for all-hydride MOMBE: examination of trimethylamine alane, trimethylamine gallane, and arsine

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1. Next generation adduct purification techniques for low oxygen content metal alkyls;Journal of Electronic Materials;2000-01

2. Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy;Journal of Applied Physics;1999-07

3. Potential and prospects of CBE technology compared to MBE as production tool for microwave devices;Journal of Crystal Growth;1998-06

4. Radical Processes in the Pyrolysis of Trialkyl Compounds of Group 13 CVD Precursors;Chemical Vapor Deposition;1998-03

5. Radical Processes in the Pyrolysis of Trialkyl Compounds of Group 13 CVD Precursors;Chemical Vapor Deposition;1998-03

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