XTEM investigation of Ge/Pd shallow contact to p-In0.53Ga0.47As
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference26 articles.
1. Metallurgical comparison of Au and Au:An:Au contacts on InGaAs, InGaAsP layers
2. Solid-phase regrowth of compound semiconductors by reaction-driven decomposition of intermediate phases
3. Nonalloyed ohmic contacts ton‐GaAs by solid‐phase epitaxy of Ge
4. Non‐alloyed ohmic contact ton‐GaAs by solid phase epitaxy
5. An investigation of a nonspiking Ohmic contact to n-GaAs using the Si/Pd system
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Silicon fab-compatible contacts to n-InP and p-InGaAs for photonic applications;Applied Physics Letters;2012-05-14
2. Pd/Sb(Zn) and Pd/Ge(Zn) ohmic contacts on p-type indium gallium arsenide: The employment of the solid phase regrowth principle to achieve optimum electrical and metallurgical properties;Journal of Electronic Materials;2000-07
3. Microstructure evolution study of Pd–Ge ohmic contact formation on GaAs;Journal of Applied Physics;1999-07-15
4. Optimizing Pd–Ge ohmic contact to GaAs through microstructure control;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
5. Ohmic Pd/Zn/Au/LaB6/Au contacts on p-type In0.53Ga0.47As: Electrical and metallurgical properties;Journal of Applied Physics;1998-07-15
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