Avoiding end-of-range dislocations in ion-implanted silicon
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference20 articles.
1. A systematic analysis of defects in ion-implanted silicon
2. B diffusion in Si predamaged with Si+ or Ge+ and preannealed at 200–1000°C
3. On the relation between dopant anomalous diffusion in Si and end-of-range defects
4. Pre-amorphization damage in ion-implanted silicon
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1. Physical understanding of cryogenic implant benefits for electrical junction stability;Applied Physics Letters;2012-03-12
2. Defect-impurity engineering in implanted silicon;Physics-Uspekhi;2003-08-31
3. Influence of substrate dopant concentration on electrical properties and residual defects in pn junction formed by low-temperature post-implantation annealing;Journal of Applied Physics;2000-04
4. Strain induced defects in Si1−xGex-alloy layers formed by solid phase epitaxial growth of 40 keV Ge+ ion implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-04
5. Thermal solid phase epitaxial growth and ion-beam induced crystallisation of Ge+ ion implanted layers in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-12
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