Relaxation of strained InGaAs/GaAs layers under thermal processing
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference5 articles.
1. Band-structure engineering for low-threshold high-efficiency semiconductor lasers
2. Plastic relaxation of InGaAs grown on GaAs
3. On the mechanisms of strain release in molecular‐beam‐epitaxy‐grown InxGa1−xAs/GaAs single heterostructures
4. Misfit dislocation generation in epitaxial layers
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2. Pulsed Laser Irradiation of GaAs-Based Light-Emitting Structures;Semiconductors;2020-12
3. MBE growth of high performance very long wavelength InGaAs/GaAs quantum well infrared photodetectors;Journal of Physics D: Applied Physics;2020-01-22
4. Barrier growth temperature of InGaAs/AlGaAs-quantum well infrared photodetector;Acta Physica Sinica;2017
5. Formation of misfit dislocations in strained-layer GaAs/In[sub x]Ga[sub 1−x]As/GaAs heterostructures during postfabrication thermal processing;Journal of Applied Physics;2003
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