Effect of base dopant species on heterojunction bipolar transistor reliability
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference30 articles.
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2. CBr4 and Be heavily doped InGaAs grown in a production MBE system;Journal of Crystal Growth;2005-05
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4. Investigation of carbon-doped base materials grown by CBE for Al-free InP HBTs;Journal of Crystal Growth;2000-02
5. A comprehensive study of AlGaAs/GaAs beryllium- and carbon-doped base heterojunction bipolar transistor structures subjected to rapid thermal processing;Journal of Applied Physics;1999-12
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